
The new computer vision technique developed by MIT engineers significantly speeds up the characterization of newly synthesized electronic materials. It automatically analyzes images of printed semiconducting samples and quickly estimates two key electronic properties for each sample: band gap (a measure of electron activation energy) and stability (a measure of longevity). This technique is 85 times faster compared to the standard benchmark approach and has the potential to clear the bottleneck in the pipeline of advanced materials screening.
The integration of this technique into the process of discovering and characterizing new materials for electronic applications involves the following steps:
This new technique has the potential to accelerate the search for promising electronic materials, including those for solar cells, transistors, LEDs, and batteries, and could lead to faster and more efficient development of advanced electronic applications.

The new computer vision technique developed by MIT engineers estimates two key electronic properties for each sample of electronic materials: band gap (a measure of electron activation energy) and stability (a measure of longevity).

The new computer vision technique developed by MIT engineers significantly speeds up the characterization of newly synthesized electronic materials. It is 85 times faster compared to the standard benchmark approach of manual characterization. The manual process, handled by a domain expert, typically characterizes about 20 material samples per hour, which is much slower compared to some printing tools that can lay down 10,000 different material combinations per hour. The new technique allows for a high-speed characterization process while maintaining a high level of accuracy in the measurements.